? 2013 ixys corporation, all rights reserved symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 ? a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 300 ? a t j = 125 ? c 5 ma i ges v ce = 0v, v ge = ? 20v ????????????????????????????????????????????????????????? 100 na v ce(sat) i c = 60a, v ge = 15v, note 1 1.50 1.80 v i c = 120a 1.75 v symbol test conditions maximum ratings v ces t j = 25 ? c to 150 ? c 600 v v cgr t j = 25 ? c to 150 ? c, r ge = 1m ? 600 v v ges continuous ? 20 v v gem transient ? 30 v i c25 t c = 25 ? c (limited by leads) 75 a i c110 t c = 110 ? c40a i f110 t c = 110 ? c34a i cm t c = 25 ? c, 1ms 450 a ssoa v ge = 15v, t vj = 125 ? c, r g = 3 ? i cm = 240 a (rbsoa) clamped inductive load v ce ? v ces p c t c = 25 ? c 200 w t j -55 ... +150 ? c t jm 150 ? c t stg -55 ... +150 ? c v isol 50/60 hz, 1 minute 2500 v ~ f c mounting force 20..120/4.5..27 n/lb t l maximum lead temperature for soldering 300 c t sold 1.6mm (0.062 in.) from case for 10s 260 c weight 5 g ds99875b(7/13) v ces = 600v i c110 = 40a v ce(sat) ? ? ? ? ? 1.80v t fi(typ) = 92ns IXGR72N60B3H1 genx3 tm 600v igbt w/ diode (electrically isolated tab) me dium speed low vsat pt igbt for 5-40 khz switching isoplus247 tm g c e g = gate c = collector e = emitter isolated tab features ? silicon chip on direct-copper bond (dcb) substrate ? isolated mounting surface optimized for low conduction and switching losses ? 2500v~ electrical isolation ? square rbsoa ? anti-parallel ultra fast diode advantages ? high power density ? low gate drive requirement applications ? power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts
ixys reserves the right to change limits, test conditions, and dimensions. IXGR72N60B3H1 symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. g fs i c = 50a, v ce = 10v, note 1 45 76 s c ies 6800 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 576 pf c res 80 pf q g 225 nc q ge i c = 60a, v ge = 15v, v ce = 0.5 ? v ces 40 nc q gc 82 nc t d(on) 31 ns t ri 33 ns e on 1.4 mj t d(off) 152 240 ns t fi 92 150 ns e off 1.0 2.0 mj t d(on) 29 ns t ri 34 ns e on 2.7 mj t d(off) 228 ns t fi 142 ns e off 2.2 mj r thjc 0.62 ? c/w r thcs 0.15 ? c/w ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 reverse diode (fred) ( symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. v f i f = 60a, v ge = 0v, note 1 1.6 2.3 v t j = 150c 1.4 1.8 v i rm i f = 60a, v ge = 0v, t j = 100c 8.3 a -di f /dt = 200a/ s, v r = 300v t rr i f = 60a, -di/dt = 200a/ s, v r = 300v, t j = 100c 140 ns r thjc 0.80 c/w notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . inductive load, t j = 125c i c = 50a, v ge = 15v v ce = 480v, r g = 3 ? note 2 inductive load, t j = 25c i c = 50a, v ge = 15v v ce = 480v, r g = 3 ? note 2 isoplus247 (ixgr) outline 1 - gate 2 - collector 3 - emitter
? 2013 ixys corporation, all rights reserved IXGR72N60B3H1 fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 012345678 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 3. output characteristics @ t j = 125oc 0 20 40 60 80 100 120 0.0 0.5 1.0 1.5 2.0 2.5 v ce - volts i c - amperes v ge = 15v 13v 11v 9v 7v 5v fig. 4. dependence of v ce(sat) on junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 120a i c = 60a i c = 30a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 120a 60a 30a t j = 25oc fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGR72N60B3H1 ixys ref: g_72n60b3(76)02-10-09-d fig. 11. maximum transient thermal impedance 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. transconductance 0 20 40 60 80 100 120 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 180 200 220 240 q g - nanocoulombs v ge - volts v ce = 300v i c = 60a i g = 10ma fig. 10. reverse-bias safe operating area 0 40 80 120 160 200 240 280 100 200 300 400 500 600 v ce - volts i c - amperes t j = 125oc r g = 3 ? dv / dt < 10v / ns fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mhz c ies c oes c res
? 2013 ixys corporation, all rights reserved IXGR72N60B3H1 fig. 12. inductive switching energy loss vs. gate resistance 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 35 40 45 50 55 r g - ohms e off - millijoules 1 2 3 4 5 6 7 8 9 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 480v i c = 50a i c =100a i c = 25a fig. 15. inductive turn-off switching times vs. gate resistance 80 100 120 140 160 180 200 220 240 0 5 10 15 20 25 30 35 40 45 50 55 r g - ohms t f i - nanoseconds 100 250 400 550 700 850 1000 1150 1300 t d(off) - nanoseconds t f i t d(off) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 50a i c = 25a i c = 100a i c = 25a, 50a, 100a fig. 13. inductive switching energy loss vs. collector current 0 1 2 3 4 5 6 7 20 30 40 50 60 70 80 90 100 i c - amperes e off - millijoules 0 1 2 3 4 5 6 7 e on - millijoules e off e on - - - - r g = 3 ? ???? v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0 1 2 3 4 5 6 7 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0 1 2 3 4 5 6 7 e on - millijoules e off e on - - - - r g = 3 ? ???? v ge = 15v v ce = 480v i c = 50a i c = 100a i c = 25a fig. 16. inductive turn-off switching times vs. collector current 70 90 110 130 150 170 190 210 230 20 30 40 50 60 70 80 90 100 i c - amperes t f i - nanoseconds 130 145 160 175 190 205 220 235 250 t d(off) - nanoseconds t f i t d(off) - - - - r g = 3 ? ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 60 80 100 120 140 160 180 200 220 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f i - nanoseconds 140 155 170 185 200 215 230 245 260 t d(off) - nanoseconds t r i t d(off) - - - - r g = 3 ? ? , v ge = 15v v ce = 480v i c = 25a, 50a, 100a
ixys reserves the right to change limits, test conditions, and dimensions. IXGR72N60B3H1 ixys ref: g_72n60b3(76)02-10-09-d fig. 18. inductive turn-on switching times vs. gate resistance 10 30 50 70 90 110 130 150 170 0 5 10 15 20 25 30 35 40 45 50 55 r g - ohms t r i - nanoseconds 20 35 50 65 80 95 110 125 140 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 100a i c = 25a i c = 50a fig. 19. inductive turn-on switching times vs. collector current 10 20 30 40 50 60 70 80 90 20 30 40 50 60 70 80 90 100 i c - amperes t r i - nanoseconds 26 27 28 29 30 31 32 33 34 t d(on) - nanoseconds t r i t d(on) - - - - r g = 3 ? ? , v ge = 15v v ce = 480v 25oc < t j < 125oc t j = 25oc, 125oc fig. 20. inductive turn-on switching times vs. junction temperature 0 10 20 30 40 50 60 70 80 90 100 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r i - nanoseconds 25 26 27 28 29 30 31 32 33 34 35 t d(on) - nanoseconds t r i t d(on ) - - - - r g = 3 ? ? , v ge = 15v v ce = 480v i c = 25a i c = 50a i c = 100a
? 2013 ixys corporation, all rights reserved IXGR72N60B3H1 fig. 21 forward current i f vs. v f fig. 22 typ. reverse recovery charge q rr fig. 24 typ. dynamic parameters q rr , i rm fig. 25 typ recovery time t rr fig. 23 typ. peak reverse current i rm fig. 26 maximum transient thermal impedance junction to case (for diode) 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 pulse width [s] z(th)jc - [ oc / w ]
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